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iBasso AMP17
iBasso once again demonstrates its technological edge within the world of high-performance portable audio devices. The AMP17 is the first headphone amplifier to use gallium nitride (GaN). Compared to traditional MOSFETs or bipolar transistors, GaNFETs offer electron mobility of up to 2000 cm²/V-s, resulting in higher electron speeds and lower conduction losses at high frequencies.
The total Miller charge (QGD) of GaNFETs is significantly lower than that of conventional MOSFETs of similar resistance. This property enables faster switching speeds, which in audio amplifiers leads to improved transient response, extended dynamic range and extremely precise control.
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